Includes bibliographical references and indexes.
|Other titles||21st International Conference on Defects in Semiconductors., Twenty-first International Conference on Defects in Semiconductors., International Conference on Defects in Semiconductors., ICDS-21., Defects in semiconductors.|
|Statement||guest editor, Detlev M. Hofmann.|
|Series||Physica -- v. 308-310.|
|Contributions||Hofmann, Detlev M.|
|The Physical Object|
|Pagination||xxix, 1241 p. :|
|Number of Pages||1241|
Get this from a library! Defect control in semiconductors: proceedings of the International Conference on the Science and Technology of Defect Control in Semiconductors, the Yokohama 21st century forum, Yokohama, Japan, September Volume II. [K Sumino;] -- Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern . Abstract. Book Review K. SUMINO (ed.) Defect Control in Semiconductors Proceedings of the International Conference on the Science and Technology of Defect Control in Semiconductors, The Yokohama 21st Century Forum, Yokohama, Japan, September , North-Holland, Amsterdam, New York, Oxford, Tokyo, Volume I pages, Volume I1 . The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record scientists from 40 countries participated in the Conference which was held in San Francisco August 61 0, The proceedings of the 27th International Conference on Defects in Semiconductors is a co-publication with Journal of Applied Physics. The bulk of the papers, after peer review, have been published as a volume of AIP Proceedings with a selection of papers published separately as a special topic section of Journal of Applied Physics (http Author: Anna Cavallini, Stefan K. Estreicher.
Semiconductor devices, from the earliest transistors to the projected spin-ristors, depend critically on defects. Methods to controllably add and minimize defects are essential for the success of optical, electronic, and spintronic based technologies, therefore, developing a detailed understanding of their fundamental physics and chemistry is mandatory for the creation of new . Physics of semiconductors: Proceedings of the 7th International Conference, Paris, on *FREE* shipping on qualifying offers. Physics of semiconductors: Proceedings of the 7th International Conference, Paris, Manufacturer: Academic P. select article Proceedings of the 26th International Conference on Defects in Semiconductors (ICDS) Conference info Full text access Proceedings of the 26th International Conference on Defects in Semiconductors (ICDS) Jan Evans-Freeman, Karen Vernon-Parry, Martin Allen. Titlerd International Conference on Physics of Semiconductors (ICPS ) Desc:Proceedings of a meeting held 31 July - 5 August , Beijing, China. Series:Journal of Physics: Conference Series Volume ISBN Pages (1 Vol) Format:Softcover TOC:View Table of Contents Publ:Institute of Physics Publishing (IOP) POD Publ:Curran Associates, Inc. .
September ISBN: ISSN: International Conference on Extended Defects in Semiconductors (EDS ) Brighton, United Kingdom. All the goals of the international conference are to fulfill the mission of the series conference which is to review, exchange, summarize and promote the latest achievements in the field of industrial engineering and engineering management over the past year and to propose prospects and vision for the further development. This book contains abstracts of works included in the programme of the 25th International Conference on Defects in Semiconductors (St Petersburg, Russia, July 20–24, ). The abstracts are grouped in three chapters: Plenary sessions — abstracts of 3 plenary talks File Size: 1MB. Bringing together researchers from twenty-five countries, Narrow Gap Semiconductors: Proceedings of the 12th International Conference on Narrow Gap Semiconductors discusses the recent advances and discoveries in the science and technology of narrow gap semiconductors (NGS). In particular, it explore.